to-92l plastic-encapsulate transistors 2SA1020 transistor (pnp) features power amplifier applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a,i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-100a,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -1 a emitter cut-off current i ebo v eb =-5v,i c =0 -1 a h fe(1) v ce =-2v,i c =-0.5a 70 240 dc current gain h fe(2) v ce =-2v,i c =-1.5a 40 collector-emitter saturation voltage v ce(sat) i c =-1a,i b =-50ma -0.5 v base-emitter saturation voltage v be(sat) i c =-1a,i b =-50ma -1.2 v transition frequency f t v ce =-2v,i c =-500ma 100 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 40 pf turn-on time t on 0.1 s storage time ts 1 s fall time tf v cc =-30v,i b1 =-i b2 =-0.05a, i c =-1a 0.1 s classification of h fe(1) rank o y range 70-140 120-240 to-92l 1. emitter 2. collector 3. base 1 2 3 symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current ?continuous -2 a p c collector power dissipation 900 mw t j junction temperature 150 t stg storage temperature -55-150 tiger electronic co.,ltd
typical characteristics 2SA1020
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